AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si₃N₄Gate Insulator

30 April 2003

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 42 (Part 1, No) , 2278-2280
https://doi.org/10.1143/jjap.42.2278

Abstract

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si₃N₄ film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si₃N₄ gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs.

Keywords

HIGH ELECTRON MOBILITY TRANSISTOR
LOW FREQUENCY NOISE
LEAKAGE CURRENT

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Abstract

Keywords

AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si₃N₄Gate Insulator