GaAs/GaAlAs active-passive-interference laser

14 April 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (8) , 302-303
https://doi.org/10.1049/el:19830210

Abstract

A GaAs/GaAlAs interference laser with an active and a passive section is reported. A very clean single longitudinal mode is obtained and maintained without mode hopping over about 10°C, which results from the combined effect of interference and real index waveguiding in the lateral direction.

Keywords

LONGITUDINAL MODE
ACTIVE SECTION
PASSIVE SECTION
SEMICONDUCTOR LASER
GAAS/GAALAS INTERFERENCE LASER
REAL INDEX WAVEGUIDING

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