Photoluminescence excitation spectra of CuInS2 crystals
- 1 August 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 90 (3) , 1292-1296
- https://doi.org/10.1063/1.1383582
Abstract
The photoluminescence excitation (PLE) spectra of crystals grown by the traveling heater method (THM) and the iodine vapor transport method (IT) have been examined. THM crystals show significant structure with many peaks and dips in the PLE spectra, whereas IT crystals exhibits two clear peaks at two free exciton energies in the spectrum. The peak and dip structures of PLE spectra at the free exciton energy depend on the monitoring PL peak, the kind of crystals, and temperatures. A proposed relaxation process of excited electron–hole pairs explains peak and dip structures of PLE spectra at the free exciton energies.
This publication has 7 references indexed in Scilit:
- Resonant Raman scattering and luminescence in CuInS2 crystalsJournal of Applied Physics, 1998
- The defect structure of CuInS2. part I: Intrinsic defectsJournal of Physics and Chemistry of Solids, 1989
- Luminescence of CuInS2: I. The broad band emission and its dependence on the defect chemistryJournal of Luminescence, 1982
- Luminescence of CuInS2Journal of Luminescence, 1982
- Valence-band structure ofalloysPhysical Review B, 1974
- Hybridization of the Valence Bands of I-III-CompoundsPhysical Review B, 1972
- Electrical Properties, Optical Properties, and Band Structure of CuGaand CuInPhysical Review B, 1971