Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation

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Abstract
Using high dose implantation of Cr+ into (111)‐oriented Si, followed by annealing, we have created continuous, buried layers of CrSi2 in Si. The layers are stoichiometric and epitaxially aligned along one of the substrate 〈111〉 directions. Results of temperature‐dependent resistivity and Hall measurements on the early layers show that they are p‐type degenerate semiconductors consistent with data for bulk samples. More recent layers appear to be single crystal with [0001] parallel to [111] and are n type with lower carrier density.