INTERNAL Q SWITCHING IN GaAs JUNCTION LASERS
- 1 June 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 12 (11) , 365-367
- https://doi.org/10.1063/1.1651857
Abstract
Internally Q‐switched light pulses have been obtained from junction lasers. Narrow bursts of light (after the termination of the injection current pulse. The effect persists for a wide variation in the length of the current pulse, from less than 2 nsec to several μsec. The internal absorption losses controlling Q switching are strongly dependent on both temperature and current. The effect is only seen in diodes with very low transition temperatures (Tt) between the regions of short and long stimulated emission delay times.Keywords
This publication has 2 references indexed in Scilit:
- Delay of the stimulated emission in GaAs laser diodes near room temperatureSolid-State Electronics, 1967
- Turn-on delay in gallium arsenide lasers operated at room temperatureIEEE Transactions on Electron Devices, 1965