InP/InGaAs double heterostructure bipolar transistors grown by MBE

17 July 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (15) , 781-783
https://doi.org/10.1049/el:19860536

Abstract

Double heterostructure bipolar transistors have been fabricated on InP/InGaAs MBE material. Current gains of up to 80 have been observed in the emitter-up configuration. The devices were fabricated using two diffusion techniques and selective etching to contact the base.

Keywords

SELECTIVE ETCHING
CURRENT GAIN
DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS
INP/INGAAS
BASE CONTACT
DIFFUSION TECHNIQUES
DH BIPOLAR TRANSISTORS
SEMICONDUCTORS
EMITTER-UP CONFIGURATION
MBE

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