10-W and 12-W GaAs IMPATT's
- 1 April 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (4) , 200
- https://doi.org/10.1109/t-ed.1975.18105
Abstract
Hi-lo and lo-hi-lo GaAs Schottky-barrier IMPATT diodes have generated CW power outputs over 12 and 10 W, respectively, at 6 GHz. Noise measurements indicate a decreasing FM noise measure with increasing power output. The diodes are less susceptible to tuning-induced burnout than are flat-profile GaAs Impatts, having repeatedly survived input power surges over 70 W.Keywords
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