Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires

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Abstract
Quantum dots and quantum wires based on CdZnSe/ZnSe single quantum well heterostructures have been achieved using electron beam lithography and wet chemical etching. Photoluminescence spectra of the dot and wire structures show a blue shift due to lateral quantization for lateral dimensions below 40 nm. For the dot ground state, a lateral confinement energy of 16 meV is obtained for 28 nm diameter structures. For wires with widths on the order of 20 nm, lateral confinement energies of about 5 meV are observed. The dot diameter and wire width dependence of the emission energies can be described based on a square well potential and the measured sizes of the structures.