Evidence of trapping in device-quality liquid-phase-epitaxial In _{1−
x} Ga _x As _y P _{1−
y}

8 November 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (23) , 753-755
https://doi.org/10.1049/el:19790538

Abstract

Traps have been identified in epitaxial n- and p-type In_1−xGa_xAs_yP_1−y for the first time. The activation energy, capture cross-section and density of several electron traps in the quaternary composition range from InP to In_0.53Ga_0.47As have been determined. An electron trap similar in some characteristics to the 0.83 eV electron trap present dominantly in bulk and v.p.e. GaAs was observed in an n-type In_0.71Ga_0.29As_0.45P_0.55(E_g=0.95 eV) layer. Hole traps were not observed.

Keywords

ACTIVATION ENERGY
IN1-XGAXASYP1-Y
DEVICE QUALITY SEMICONDUCTOR MATERIAL
TRAPPING
LPE LAYERS
III-V SEMICONDUCTORS
SEMICONDUCTOR EPITAXIAL LAYERS
CAPTURE CROSS SECTIONS
N-TYPE SEMICONDUCTORS
P-TYPE SEMICONDUCTORS
ELECTRON TRAPS DENSITY

Evidence of trapping in device-quality liquid-phase-epitaxial In 1− x Ga x As y P 1− y

Abstract

Keywords

Evidence of trapping in device-quality liquid-phase-epitaxial In _{1−
x} Ga _x As _y P _{1−
y}