Ionization-energy dependence on GaAs(001) surface superstructure measured by photoemission-yield spectroscopy
- 15 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (9) , 6076-6078
- https://doi.org/10.1103/physrevb.41.6076
Abstract
The ionization energies for GaAs(001) are determined by photoemission-yield spectroscopy as a function of surface superstructure. The ionization energy changes by as much as 0.5 eV in accordance with the surface superstructure.Keywords
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