Relative rate studies for silylene
- 2 May 1986
- journal article
- Published by Elsevier in Chemical Physics Letters
- Vol. 126 (2) , 153-157
- https://doi.org/10.1016/s0009-2614(86)80030-6
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- The photodissociation of phenylsilane at 193 nmChemical Physics Letters, 1986
- Reactions of SiH2(X̄1A1) with H2, CH4, C2H4, SiH4 and Si2H6 at 298 KChemical Physics Letters, 1985
- Laser powered homogeneous pyrolysis of silaneChemical Physics Letters, 1985
- Laser-induced fluorescence of the SiH2 radicalChemical Physics Letters, 1984
- Thermochemistry of silicon-containing compounds. Part 1.—Silicon–halogen compounds, an evaluationJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1983
- Bond dissociation energy values in silicon-containing compounds and some of their implicationsAccounts of Chemical Research, 1981
- Arrhenius parameters for silene insertion into silicon–hydrogen bondsJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1975
- Relative insertion rates of silylene and evidence for silylsilylene insertion into silicon-hydrogen and silicon-silicon bondsJournal of the American Chemical Society, 1973
- Spectrum of SiH2The Journal of Chemical Physics, 1967
- The pyrolysis of monosilaneProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966