A three transistor-cell, 1024-bit, 500 NS MOS RAM

Publisher Website

1 January 1970

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 42-43
https://doi.org/10.1109/isscc.1970.1154796

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Silicon-gate technology
IEEE Spectrum, 1969
Computer-aided design and characterization of digital MOS integrated circuits
IEEE Journal of Solid-State Circuits, 1969