Thermal quenching of the minority-carrier lifetime in a-Si:H

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Abstract
While the phenomenon of thermal quenching of the photoconductivity (i.e., the decrease of the majority-carrier mobility-lifetime product with increasing temperature) is well known, the thermal quenching of the minority-carrier mobility-lifetime product has not been reported thus far for any photoconductor. In this paper, we report such an effect in ``device-quality'' hydrogenated amorphous silicon, a-Si:H. It is shown that this unusual phenomenon can be accommodated within the framework of available models suggested for intrinsic a-Si:H.

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