Lattice damage in III/V compound semiconductors caused by dry etching

• 2 October 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 67  (14) , 2034-2036
• https://doi.org/10.1063/1.115069

Abstract

Keywords

• FABRY PEROT
• REACTIVE ION ETCHING
• ION BEAM
• GALLIUM ARSENIDE
• FABRY PEROT INTERFEROMETER
• ELECTRON CYCLOTRON RESONANCE