A kinetic study of the plasma-etching process. II. Probe measurements of electron properties in an rf plasma-etching reactor
- 1 April 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 2939-2946
- https://doi.org/10.1063/1.331075
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Mechanisms of radical production in radiofrequency discharges of CF3Cl, CF3Br, and certain other plasma etchants: Spectrum of a transient speciesJournal of Applied Physics, 1980
- The effect of added acetylene on the rf discharge chemistry of C2F6. A mechanistic model for fluorocarbon plasmasJournal of Applied Physics, 1980
- Optical Spectroscopy Applied to the Study of Plasma EtchingApplied Spectroscopy, 1980
- The effect of added hydrogen on the rf discharge chemistry of CF4, CF3H, and C2F6Journal of Applied Physics, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its CompoundsIBM Journal of Research and Development, 1979
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Mass spectrometric study of plasma etchingJournal of Vacuum Science and Technology, 1978
- Plasma etching A ’’pseudo-black-box’’ approachJournal of Applied Physics, 1977
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977