Impurity-induced ferroelectric relaxor behavior in quantum paraelectricand ferroelectric
- 1 January 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (2) , 957-961
- https://doi.org/10.1103/physrevb.61.957
Abstract
We report that “ferroelectric relaxor” behavior is induced by doping Bi in quantum paraelectric and doping Ce in typical ferroelectric The present results show that the “ferroelectric relaxor” state may exist no matter whether the matrix is ferroelectric or paraelectric, however, the relaxor behavior is the dynamic response of the polar clusters induced in the system.
Keywords
This publication has 22 references indexed in Scilit:
- Dielectric relaxation modes in bismuth-doped The relaxor behaviorPhysical Review B, 1999
- Glassy freezing in relaxor ferroelectric lead magnesium niobatePhysical Review B, 1998
- Temperature dependence of the dielectric constant of relaxor ferroelectricsPhysical Review B, 1998
- Dynamics of interacting clusters and dielectric response in relaxor ferroelectricsPhysical Review B, 1998
- Distribution of relaxation times in perovskite-type relaxor ferroelectricsJournal of Applied Physics, 1995
- Diffuse phase transitions and random-field-induced domain states of the ‘‘relaxor’’ ferroelectricPhysical Review Letters, 1992
- Freezing of the polarization fluctuations in lead magnesium niobate relaxorsJournal of Applied Physics, 1990
- A new framework for understanding relaxor ferroelectricsJournal of Physics and Chemistry of Solids, 1990
- Relaxor ferroelectricsFerroelectrics, 1987
- The role of B-site cation disorder in diffuse phase transition behavior of perovskite ferroelectricsJournal of Applied Physics, 1980