Laser annealing of low dose Se-implanted GaAs studied by d.l.t.s.

19 June 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (13) , 512-514
https://doi.org/10.1049/el:19800358

Abstract

Deep level transient spectroscopy (d.l.t.s.) has been applied to the study of deep levels in GaAs following post-implantation annealing using a Q-switched ruby laser. High concentrations (> 10¹⁵ cm⁻³) of deep trapping levels are observed in the laser melt region using a forward-bias voltage pulse.

Keywords

SE IMPLANTATION
FORWARD BIAS VOLTAGE PULSE
DEEP TRAPPING LEVELS
LASER MELT REGION
DEEP LEVEL TRANSIENT SPECTROSCOPY
LASER ANNEALING
GAAS:SE
Q SWITCHED RUBY LASER

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