4H-SiC bipolar P-i-N diodes with 5.5 kV blocking voltage

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 86-87
https://doi.org/10.1109/drc.1998.731132

Abstract

High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.

Keywords

P-I-N DIODES
VOLTAGE
RECTIFIERS
SEMICONDUCTOR MATERIALS
AVAILABILITY
HARDWARE
ENERGY STORAGE
MACHINE INTELLIGENCE
MACHINERY
SOLID STATE CIRCUITS

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