Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current

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Abstract
Double heterostructure laser junctions have been prepared by the metalorganic vapour deposition process and evaluated for threshold current and for nonradiative recombination characteristics. Threshold currents around 850 A cm−2 were obtained, and measurements of carrier lifetime and spontaneous emission efficiency correlate well with a nonradiative lifetime of 20 ns. This value is similar to those obtained in junctions grown by liquid-phase epitaxy and puts an upper limit on interface recombination velocity of 500 cm s−1.