Four-wave mixing in semi-insulating InP and GaAs using the photorefractive effect
- 15 May 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (10) , 948-950
- https://doi.org/10.1063/1.94607
Abstract
The photorefractive effect has been observed for the first time in semi-insulating InPe:Fe and GaAsCr. These materials are sensitive and versatile recording media for high bit rate parallel optical processing in the 0.8–1.8-μm spectral region using injection lasers of milliwatt power levels.Keywords
This publication has 15 references indexed in Scilit:
- Two-wave mixing and energy transfer in Bi_12SiO_20 crystals: application to image amplification and vibration analysisOptics Letters, 1981
- Phase-conjugating mirror with continuous-wave gainOptics Letters, 1980
- Linear Electrooptic Properties of InPJapanese Journal of Applied Physics, 1980
- High-sensitivity read-write volume holographic storage in reduced KNbO3 crystalsApplied Physics A, 1980
- Model forintracenter-induced photoconductivity in InP: FePhysical Review B, 1979
- The Photorefractive EffectOptical Engineering, 1978
- Holographic storage in electrooptic crystals. i. steady stateFerroelectrics, 1978
- Excited state polarization, bulk photovoltaic effect and the photorefractive effect in electrically polarized mediaJournal of Electronic Materials, 1975
- High−sensitivity optical recording in KTN by two−photon absorptionApplied Physics Letters, 1975
- Coupled Wave Theory for Thick Hologram GratingsBell System Technical Journal, 1969