Electron beam patterning of epitaxial CaF2 and Ca0.5Sr0.5F2/(100)GaAs

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Abstract
The electron beam patterning of crystalline CaF2 and Ca0.5Sr0.5F2 thin films grown by molecular‐beam epitaxy is demonstrated. The mechanism leading to patterning is the removal of fluorine through high energy electron beam exposure and dissolution of the resulting metal oxide in a water‐based solution. A scanning Auger microprobe and a scanning electron microscope are used as exposing tools. The development of the films is performed either in deionized water or in a weak HCl solution. The chemical analysis of the patterned features confirms the development of small windows. The feasibility of the fabrication of micrometers features is verified.

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