Device-grade ultra-shallow junctions fabricated with antimony

1 September 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (9) , 534-536
https://doi.org/10.1109/edl.1986.26463

Abstract

Extremely shallow, below ∼80 nm, n+ junctions fabricated with antimony have been analytically and electrically investigated. It is shown that by the use of antimony one can reach sheet resistivity/ shallowness combinations that are superior to those achievable with arsenic. The leakage of these junctions was found to be sufficiently low to allow VLSI applications. These investigations indicate that below a certain junction depth antimony should be the dopant of preference.

Keywords

IMPLANTS
TESTING
VOLTAGE
VERY LARGE SCALE INTEGRATION
BORON
ELECTRIC VARIABLES MEASUREMENT
PERFORMANCE EVALUATION
PERFORMANCE ANALYSIS
CONDUCTIVITY MEASUREMENT
DIODES