Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping
- 1 January 1986
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 10-12, 781-786
- https://doi.org/10.4028/www.scientific.net/msf.10-12.781
Abstract
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