On space-charge recombination in pn junctions
- 29 February 1996
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (2) , 308-310
- https://doi.org/10.1016/0038-1101(95)00139-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Theory of surface photovoltage in a semiconductor with deep impuritiesSolid-State Electronics, 1993
- Theory of the photovoltage at semiconductor surfaces and its application to diffusion length measurementsSolid-State Electronics, 1992
- Intrinsic concentration, effective densities of states, and effective mass in siliconJournal of Applied Physics, 1990
- Numerical modeling of textured silicon solar cells using PC-1DIEEE Transactions on Electron Devices, 1990
- A theoretical explanation of the carrier lifetime as a function of the injection level in gold-doped siliconIEEE Transactions on Electron Devices, 1984
- Iterative scheme for computer simulation of semiconductor devicesSolid-State Electronics, 1972
- Carrier generation-recombination in the space-charge region of an asymmetrical p-n junctionSolid-State Electronics, 1968
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952