Analysis of the interface of hydrogenated amorphous carbon films on silicon by angle-resolved x-ray photoelectron spectroscopy
- 1 March 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 227 (3) , 261-267
- https://doi.org/10.1016/s0039-6028(05)80013-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Angle‐resolved X‐ray photoelectron spectroscopy of epitaxially grown (100) β‐SiC to 1300 °CSurface and Interface Analysis, 1987
- Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on siliconJournal of Vacuum Science and Technology, 1975