A simple method for growing V3Si single crystals
- 1 April 1978
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (4) , 2523-2525
- https://doi.org/10.1063/1.325104
Abstract
V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.This publication has 6 references indexed in Scilit:
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- Preparation of Single Crystals of V3SiJournal of Applied Physics, 1964
- Zone MeltingJournal of the Electrochemical Society, 1958