Low noise ohmic contacts on n and p type GaSb

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Abstract
Several metallization systems for producing ohmic contacts onto GaSb have been investigated. The minimization of contact resistivity was respectively obtained with Au-Zn on p type and Au-Te on n type. It has been shown that these results are due to an overdoped layer at the semiconductor surface. Low frequency noise measurements pointed out that the techniques used allow the realization of devices without 1/f contact noise

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