Molecular beam epitaxy of pseudomorphic silicon/carbon superlattices on silicon substrates

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Abstract
We describe the molecular beam epitaxy growth of superlattices where silicon layers with a thickness between 3 and 10 nm alternate with very thin carbon layers. High resolution x‐ray diffraction reveals that the superlattices are of excellent crystalline quality and are pseudomorphic with respect to the silicon substrate. From a dynamical simulation of the diffraction spectra we conclude that the nominal carbon layers are in fact silicon–carbon alloys with a carbon content up to 50%. Given the large lattice mismatch of more than 10% of such an alloy to the silicon substrate, astonishingly thick superlattices with up to 100 periods can be grown without lattice relaxation.

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