Rapid thermal annealing of low-temperature GaAs layers

• 17 April 1995
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 66  (16) , 2086-2088
• https://doi.org/10.1063/1.113911

Abstract

Keywords

• GALLIUM ARSENIDE
• ELECTRON MICROSCOPY
• OSTWALD RIPENING
• MOLECULAR BEAM EPITAXY
• KINETICS