A new technique for whole-wafer etch-pit density mapping in GaAs
- 1 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1375-1377
- https://doi.org/10.1063/1.342984
Abstract
The pits formed on an etched GaAs surface, due to the anisotropic etching around dislocations, are efficient light scatterers, and thus reduce transmission. We have derived a quantitative relationship between the fractional transmission and the etch-pit density (EPD) and have shown that the same absorption apparatus which is commonly used to obtain a whole-wafer [EL2] map can also be used to generate an EPD map. The technique is verified by comparing the fractional transmission with the actual EPD count at 166 points on a three-inch, low-pressure, liquid-encapsulated Czochralski wafer. Also, [EL2] and EPD maps, with more than 3500 points each, are compared.This publication has 4 references indexed in Scilit:
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- Distributions of residual stress, dislocations, and EL2 in Czochralski-grown semi-insulating GaAsJournal of Applied Physics, 1986
- GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocationsApplied Physics Letters, 1985
- Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1983