Photoconductivity as a Function of Optical Absorption

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Abstract
A theoretical analysis of the dependence of photoconductivity upon optical absorption is presented, based upon the concept of a ``schubweg'' or mean range for the optically liberated charge carriers of each sign. The analysis is based upon a model in which the light is normally incident upon a flat slab semiconductor. The electric field within the semiconductor is assumed to be either parallel or antiparallel to the direction of propagation of the incident light. The photocurrents are different for the two field directions. The ratio of the photocurrent for the parallel field direction to the photocurrent for the antiparallel field direction is found to be independent of incident light intensity, optical reflection coefficient at the front face of the slab, and photon quantum efficiency for hole-electron pair creation. The limitations of the assumed model are discussed.

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