Low-temperature release of ion-implanted helium from nickel
- 1 May 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (9) , 851-853
- https://doi.org/10.1063/1.93253
Abstract
This letter presents data on the release of He from Ni at temperatures between 18 and 300 K after ion implantation of He at 18 K. The release occurred in two stages, a sharply peaked release near 50 K and a broad release that extended from 80 to 300 K. For He doses in the range of 5×1014–1.4×1016 cm−2 and shallow implantation depths (<1000 Å) the fraction released was 1.5% in the first stage and 4% in the second. For a dose of 4.4×1016 cm−2, the fraction released in the first stage was significantly higher. The activation energy for the first stage release was 0.11±0.02 eV for all doses.Keywords
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