High quality refractory Josephson tunnel junctions utilizing thin aluminum layers
- 1 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (5) , 472-474
- https://doi.org/10.1063/1.93974
Abstract
Preparation of high quality all‐refractory Josephson tunnel junctions based on Nb/Al‐oxide‐Nb and Nb/Al‐oxide‐Al/Nb structures is reported. Critical currents up to 1300 A/cm2 and Vm values up to 35 mV were obtained. The specific capacitance of these junctions is 0.06±0.02 pF/μm2. Junctions were fabricated using standard photolithography and a new plasma etching process coupled with anodization of Nb.Keywords
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