Experimental determination of the relation between modal gain and current density for AlGaAs single quantum well lasers grown by metalorganic vapor phase epitaxy

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Abstract
The relation between modal gain and current density has been determined for a 20 Å single quantum well in a graded-index separate-confinement heterostructure laser. The measurements were performed at 153 K in order to avoid leakage of carriers out of the wells which might cause an apparent saturation of the gain. A sublinear dependence of gain on current density has been observed, agreeing rather well with theoretical calculations taking band mixing into account.