Recombination in low-resistivity n-type Zn-compensated silicon
- 16 April 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 22 (2) , 381-389
- https://doi.org/10.1002/pssa.2210220203
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Thermal ionization rates and energies of holes at the double acceptor zinc centers in siliconPhysica Status Solidi (a), 1972
- Photoelectronic Properties of Zinc Impurity in SiliconPhysical Review B, 1972
- New Optoelectronic Devices Made of Zinc-Compensated SiliconPublished by Springer Nature ,1971
- Solid solubility of Zn in SiJournal of Physics and Chemistry of Solids, 1970
- Double-Acceptor Behavior of Zinc in SiliconPhysical Review B, 1957
- Diffusion and Electrical Behavior of Zinc in SiliconPhysical Review B, 1957