Improvement of Dielectric Integrity of TiSi x ‐ Polycide ‐ Gate System by Using Rapidly Nitrided Oxides
- 1 October 1988
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 135 (10) , 2571-2574
- https://doi.org/10.1149/1.2095382
Abstract
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