Influence of boron on WSi2 formation by direct reaction between tungsten and silicon
- 1 September 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 38 (1-4) , 186-194
- https://doi.org/10.1016/0169-4332(89)90536-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Titanium disilicide formation on heavily doped silicon substratesJournal of Applied Physics, 1987
- Effects of ion implantation doping on the formation of TiSi2Journal of Vacuum Science & Technology A, 1984
- Reaction kinetics of tungsten thin films on silicon (100) surfacesJournal of Applied Physics, 1973