Organosilicon monomers for plasma-developed x-ray resists

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Abstract
A variety of silicon‐containing monomers for plasma‐developed resists formulated with chlorine‐containing host polymers have been prepared and evaluated for use with x‐ray lithography. The major design problems encountered were monomer incompatibility, high volatility, and low reactivity. One class of monomers, the bis‐acryloxy‐ and and methacryloxyalkyltetramethyldisiloxanes, satisfies all requirements. A formulation with optimum properties contains 90 parts poly(2,3‐dichloro‐1‐propyl acrylate) (DCPA) and 10 parts bis‐acryloxybutyltetramethyldisiloxane (BABTDS). It is very sensitive (30–60 s exposure time), has high resolution (better than 0.5 μm), and can be developed by reactive ion etching which provides extremely uniform developed patterns.

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