A novel BBD structure for low voltage operation
- 1 January 1982
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 119-122
- https://doi.org/10.1109/iedm.1982.190228
Abstract
A new MOS BBD which can operate at extremely low voltage has been realized. A novel pentode MOS structure, having three overlapping gates, has been developed by introducing double poly-Silicon process. Making potential gradient along the channel length and excluding the stray capacitance, high transconductance and low channel length modulation are simultaneously obtained, and as a result, the transfer inefficiency is decreased. Consequently, the transfer inefficiency of2\times10^{-5}has been obtained even at 1.5V supply and 40kHz clock.Keywords
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