Schottky-collector vertical PNM bipolar transistor
- 2 January 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (1) , 86-87
- https://doi.org/10.1049/el:19920053
Abstract
A submicrometre inverted vertical PNM bipolar transistor with a platinum-silicide (PtSi) silicon Schottky collector-base diode and a p+n emitter-base diode is demonstrated. The transistor presents normal bipolar device characteristics with a DC current gain as high as 40. Faster switches can be made by using PNM transistors. They offer a desirable performance leverage when implemented in VLSI logic circuits.Keywords
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