Optimizing scans on asymmetric reflections
- 1 January 1999
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 32 (10A) , A32-A36
- https://doi.org/10.1088/0022-3727/32/10a/307
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wellsPhysical Review B, 1998
- GaN/Al x Ga 1−x N quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scaleApplied Physics Letters, 1998
- Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scatteringApplied Physics Letters, 1998
- Relaxation and mosaicity profiles in epitaxial layers studied by high resolution X-ray diffractionJournal of Crystal Growth, 1994
- Determination of strain in epitaxial semiconductor layers by high-resolution X-ray diffractionJournal of Physics D: Applied Physics, 1993