Simulation of a long term memory device with a full bandstructure Monte Carlo approach
- 1 August 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (8) , 360-362
- https://doi.org/10.1109/55.400738
Abstract
Simulations of charging characteristics of a long term memory device, based on a floating gate structure, are presented. The analysis requires the inclusion of hot electron effects and a detailed account of the semiconductor bandstructure, because device operation is based on the injection of electrons into the gate oxide high above the silicon conduction band edge. We have developed a Monte Carlo simulator based on a full bandstructure approach which accurately accounts for the high energy tail of the electron distribution function. For practical simulation of the prototype structure; with 3.0-/spl mu/m source-drain separation, the simulator is used as a post-processor on the potential profile obtained from a PISCES IIB drift-diffusion solution. The computations are in quantitative agreement with experimental results for the gate injection current, measured at fixed drain and gate biases.Keywords
This publication has 5 references indexed in Scilit:
- Monte Carlo simulation of hot electron transport in Si using a unified pseudopotential description of the crystalSemiconductor Science and Technology, 1992
- Analog VLSI Implementation of Neural SystemsPublished by Springer Nature ,1989
- Theory of hot electron emission from silicon into silicon dioxideJournal of Applied Physics, 1983
- Monte Carlo simulation of impact ionization in GaAs including quantum effectsApplied Physics Letters, 1983
- Hot-electron emission from silicon into silicon dioxideSolid-State Electronics, 1978