Precise ion-implantation analysis including channeling effects

1 September 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (9) , 1278-1285
https://doi.org/10.1109/t-ed.1986.22658

Abstract

A precise channeling model is proposed for ion-implantation analysis. This channeling model includes defect scattering effects on the impurity profiles. It is restricted to only a major axial channel for simplicity and is introduced to the two-dimensional Boltzmann transport equation method in order to accurately calculate the impurity profiles. The calculations are in good agreement with experimental values at a wide range of conditions (As⁺and B⁺, 5-130 keV, 5 × 10¹³to 1 × 10¹⁵cm^-2). Furthermore, it is concluded that more than 2 × 10¹⁷cm^-3recoiled atoms prevent the ions from channeling in the Si target. Thus, this channeling model is precise enough to use in the design of even shallow-junctioned and fine-structured devices.

Keywords

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