Hall Effect in Impurity Conduction

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Abstract
The existence of a nonvanishing Hall effect in the "impurity conduction" regime of a semiconductor is demonstrated. In this regime (prevalent at low temperatures and at low impurity concentrations) the dominant electron transport mechanism is the phonon-induced hopping of charge carriers from occupied to unoccupied majority sites. The basic element of the theory is the existence of a (magnetic) field-dependent contribution to the jump probability between two sites. This contribution is computed and is shown to arise from the interference between the amplitude for a direct transition between the initial and final sites and the amplitude for an indirect, second-order transition, involving intermediate occupancy of a third site.

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