Doping effects upon the ultrasonic attenuation of Bi12SiO20
- 1 April 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (4) , 1292-1294
- https://doi.org/10.1063/1.322828
Abstract
Single crystals of bismuth silicon oxide doped with Al, Ga, or B have been grown by the Czochralski method. Doping with Ga and B reduced the previously observed anomalous ultrasonic attenuation at low temperatures considerably, doping with Al removed it completely. In a similar way the additional optical absorption below the intrinsic absorption edge is affected. Numerical comparison of both results gives values for the defect concentrations involved [(2–6) ×1017 cm−3] and for the deformation potential (about 3 eV).This publication has 5 references indexed in Scilit:
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