Investigation of Intrinsic Unoccupied Surface States at GaAs(110) by Isochromat Spectroscopy
- 24 August 1981
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (8) , 608-610
- https://doi.org/10.1103/physrevlett.47.608
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- New Probe for Unoccupied Bands at SurfacesPhysical Review Letters, 1980
- Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110)Physical Review Letters, 1980
- Isochromat spectroscopy using SXAPS equipmentApplied Physics A, 1979
- Surface structure and orbital symmetries of (110) surface states of GaAsJournal of Vacuum Science and Technology, 1978
- Evidence for subsurface atomic displacements of the GaAs(110) surface from LEED/CMTA analysisSurface Science, 1978
- VUV isochromat spectroscopyApplied Physics B Laser and Optics, 1977
- A reliability factor for surface structure determinations by low-energy electron diffractionSurface Science, 1977
- Contact potential differences for III–V compound surfacesJournal of Vacuum Science and Technology, 1976
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972