W-band monolithic frequency doubler using vertical GaAs varactor diode with n + buried layer
- 31 January 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (3) , 213-214
- https://doi.org/10.1049/el:19910138
Abstract
A W-band monolithic frequency doubler was designed and fabricated using a vertical GaAs varactor diode that has an n+ buried layer and uses a mesa isolation process. An output power of 30 mW was obtained from this chip at 93 GHz with a conversion efficiency of 12%. This is believed to be the first reported W-band monolithic varactor diode frequency doubler.Keywords
This publication has 1 reference indexed in Scilit:
- GaAs molecular beam epitaxy monolithic power amplifiers at U-bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003