Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off

• 15 February 2003
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 42  (Part 2, No) , L147-L150
• https://doi.org/10.1143/jjap.42.l147

Abstract

Keywords

• GAN LIGHT
• SIDE
• COMPARISON
• LASER
• DIODES
• LIFT
• LIGHT EMITTING
• FABRICATED