25 Gbit/s decision circuit, 34 Gbit/s multiplexer, and 40 Gbit/s demultiplexer IC in selective epitaxial Si bipolar technology

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Abstract
A 25 Gbit/s decision circuit, a 34 Gbit/s multiplexer, and a 40 Gbit/s demultiplexer IC have been realised with selective epitaxial silicon bipolar technology using 0.8 μm lithography. The data rates achieved are the highest values reported for these types of circuit in any IC technology.