Charge-pumping investigations on MNOS structures
- 1 May 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (5) , 552-559
- https://doi.org/10.1109/T-ED.1977.18777
Abstract
Charge-pump studies were performed on MNOS transistors. The well-known charge pumping due to surface states was observed. In addition, in source-drain protected structures, a well-pumping component was identified. The "scan-from-inversion" (SCI) concept was introduced for evaluation of these potential wells.Keywords
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